Powerful microwave transistors Philips Semiconductors. Domestic microwave transistors

Ham Radio Handbooks

The current level of development of REA and its elemental base currently allows the creation of completely solid-state VHF FM and television transmitters with an output power of up to 5 kW. Amplifying paths based on broadband transistor amplifiers have a number of advantages over tube ones. Solid state transmitters are more reliable, electrically safe, easy to use and easier to manufacture.

With a block-modular design of the transmitter, the failure of one of the blocks of the final amplifier does not lead to disruption of the broadcast, since the transmission will continue until the block is replaced, only with reduced power. In addition, the broadband path of the transistor amplifier does not require additional tuning to a specific channel within the operating frequency band.

It is generally accepted that the reliability of a transmitter depends primarily on the reliability of the active components used. Thanks to the use of modern high-power linear microwave transistors, the design features and manufacturing technology of which provide a significant increase in their MTBF, the issue of increasing the reliability of solid-state transmitters has received a fundamental solution.

The growing requirements for the technical and economic indicators of VHF FM and high-power television transmitters, as well as the achieved level of domestic technology in the field of creating high-power silicon bipolar transistors, stimulated the development of a new class of devices - high-power linear microwave transistors. The Research Institute of Electronic Technology (Voronezh) has developed and produces a wide range of them for use in the meter and decimeter wavelength ranges.

Transistors are specially designed for use in high-power television and radio broadcast transmitters, repeaters, in particular, in television repeaters with joint amplification of sound and image signals, as well as in multi-channel signal amplifiers of base stations of a cellular communication system. These transistors meet extremely stringent requirements for linearity of the transfer characteristic, have a margin for power dissipation and, as a result, increased reliability.

Structurally, such transistors are made in metal-ceramic cases. Their appearance is shown in Fig. 1 (cases of not all transistors mentioned in the article are shown; the missing ones can be seen in the article). High linear and frequency properties of transistor structures are realized due to the use of precision isoplanar technology. Diffusion layers have a submicron design rate. The width of the emitter elements of the topology is about 1.5 μm with their extremely developed perimeter.

In order to eliminate failures caused by secondary electrical and thermal breakdown, the transistor structure is formed on a silicon chip with a two-layer epitaxial collector and emitter stabilizing resistors. Transistors also owe long-term reliability to the use of gold-based multilayer metallization.

Linear transistors with a power dissipation of more than 50 W (with the exception of KT9116A, KT9116B, KT9133A), as a rule, have a structurally built-in LC input matching circuit, made in the form of a microassembly based on a built-in MIS capacitor and a system of wire leads. Internal matching circuits make it possible to expand the operating frequency band, simplify the input and output matching, and also increase the power gain Cp in the frequency band.

At the same time, these transistors are "balanced", which means that there are two identical transistor structures on one flange, united by a common emitter. Such a constructive and technical solution makes it possible to reduce the inductance of the output of the common electrode and also contributes to the expansion of the frequency band and simplification of matching.

With push-pull switching on of balanced transistors, the potential of their midpoint is theoretically equal to zero, which corresponds to the artificial "ground" condition. Such inclusion actually provides approximately a fourfold increase in the output complex impedance compared to a single-cycle one at the same output signal level and effective suppression of even harmonic components in the spectrum of the useful signal.

It is well known that the quality of television broadcasting primarily depends on how linear the transfer characteristic of the electronic path is. The issue of linearity is especially acute when designing nodes for joint amplification of image and sound signals due to the appearance of combinational components in the frequency spectrum. Therefore, the three-tone method proposed by foreign experts for estimating the linearity of the transfer characteristic of domestic transistors was adopted by the level of suppression of the combination component of the third order.

The method is based on the analysis of a real television signal with a signal ratio of the image carrier frequency of -8 dB. -16 dB sideband frequency and -7 dB audio carrier frequency relative to the output power at the peak of the envelope. Transistors for joint amplification, depending on the frequency and power range, should provide the value of the coefficient of the combinational components of the MOH, as a rule, not more than -53 ... -60 dB.

The class of microwave transistors under consideration with strict regulation of the suppression of combinational components was called superlinear transistors abroad. It should be noted that such a high level of linearity is usually realized only in class A mode, where it is possible to carry out the maximum mode linearization of the transfer characteristic.

In the meter range, as can be seen from the table, there are a number of transistors, represented by the KT9116A, KT91166, KT9133A and KT9173A devices with an output peak power of Rvmx.peak, respectively, 5.15, 30 and 50 watts. In the decimeter wave range, such a series is represented by devices KT983A, KT983B, KT983V, KT9150A and POS with РВВ1Х, PIK equal to 0.5, 1.3.5, 8 and 25 W.

Superlinear transistors are usually used in joint amplifiers (in class A mode) of television repeaters and power amplifier modules of transmitters with a power of up to 100 watts.

However, the output stages of powerful transmitters require more powerful transistors that provide the necessary level of the upper limit of the linear dynamic range when operating in an advantageous energy mode. Acceptable harmonic distortion at a high signal level can be obtained by applying split amplification in class AB mode.

Based on the analysis of the thermophysical conditions of the transistor operation and the features of the formation of the linearity of a single-tone signal, a series of microwave transistors was specially developed for the operation mode in class AB. The linearity of the characteristics of these devices according to a foreign method is estimated by the level of compression (compression) of the gain in terms of the power of a single-tone signal - the compression ratio Kszh or otherwise - determine the output power at a certain normalized Kszh.

For use in the meter wave range in class AB mode, there are now KT9151A transistors with an output power of 200 W and KT9174A transistors - 300 W. For the decimeter range, transistors 2T9155A, KT9142A, 2T9155B, KT9152A, 2T9155V, KT9182A with an output power of 15 to 150 W have been developed.

For the first time, the possibility of creating modular solid-state transmitters in the decimeter range with joint amplification of image and sound signals with a power of 100 W was demonstrated by NEC specialists. Later, similar transmitters were created on domestic high-power microwave transistors 12, 9]. In particular, it describes original research on expanding the scope of use of powerful transistors KT9151A and KT9152A when creating hundred-watt co-amplification modules in class A mode. It is shown that in this mode it is possible to suppress combinational components when their power is underused by 3...4 times from the nominal in class AB mode.

Specialists of the Novosibirsk State Technical University conducted research on the use of domestic high-power microwave transistors in the modules of television power amplifiers with separate amplification.

On fig. 2 is a block diagram of an image signal power amplifier for television channels 1 to 5 with an output peak power of 250 watts. The amplifier is made according to the scheme of separate amplification of image and sound signals. For channels 6 - 12, the amplifier is performed in a similar way with the addition of an intermediate stage on a KT9116A transistor operating in class A mode to obtain the required gain.

In the output stage, KT9151A transistors operate in class AB. It is assembled according to a balanced-push-pull scheme. This makes it possible to obtain the rated output power with fairly simple matching circuits in the complete absence of "feeder echo" and the level of even harmonic components of no more than -35 dB. The nonlinearity of the amplitude characteristic of the amplifier is set at a small signal by selecting the offset of the operating point in each stage, as well as by correcting the nonlinearity in the exciter video modulator.

The block diagram of the power amplifier for television channels 21 - 60 is shown in fig. 3. The output stage of the amplifier is also made according to a balanced push-pull scheme.

To ensure broadband matching and the transition from asymmetric to symmetrical load in the output stages of the amplifiers of channels 6 - 12, 21 - 60, a two-link low-pass filter is used as a corrective circuit. The inductance of the first link of the matching circuit is implemented in the form of sections of strip microlines on the elements of the general topology of the printed circuit board. The coils of the second link are the outputs of the base of the transistors.

The structure of these amplifiers corresponds to Fig. 2 and 3. The separation of power at the input of the amplifying stages and its addition at their output, as well as the matching of the inputs and outputs with a standard load, was performed using 3dB directional couplers. Structurally, each coupler is made in the form of bifilar windings (quarter-wave lines) on a frame placed in a shielding casing.

Thus, modern domestic linear microwave transistors make it possible to create powerful - up to 250 W - television amplifier modules. Using the batteries of such modules, it is possible to increase the output power given to the antenna-feeder path up to 2 kW. As part of the transmitters, the developed amplifiers meet all modern requirements for electrical characteristics and reliability.

Powerful linear microwave transistors have recently begun to be widely used also in the construction of power amplifiers for base stations of a cellular communication system.

According to their technical level, powerful microwave linear transistors developed by NIIET can be used as an element base for creating modern broadcasting, television and other national economic and amateur radio equipment.

Material prepared
A. Assessors, V. Assessors, V. Kozhevnikov, S. Matveev Voronezh

LITERATURE
1. Hlraoka K., FuJIwara S., IkegamI T. etc. High power all solid-state UHF transmitters.- NEC Pes. & Develop. 1985. to 79, p. 61-69.
2. Assessors V., Kozhevnikov V., Kosoy A. Scientific search for Russian engineers. The development trend of high-power microwave transistors - Radio, 1994, No. 6, p. 2.3.
3. Broadband radio transmitters. Ed. Alekseeva O. A. - M .: Communication, 1978, p. 304.
4. FuJIwurdS., IkegamI T., Maklagama I. etc. SS series solid-state television transmitter. -NEC Res. & Develop. 1989. No. 94, p. 78-89.
5. Assessorov V., Kozhevnikov V., Kosoy A. The development trend of high-power microwave transistors for use in broadcasting, television and communications.
- Electronic industry. 1994. No. 4, p. 76-80.
6. Assessors V., Kozhevnikov V.. Kosoy A. New microwave transistors. - Radio. 1996. No. 5, p. 57.58.
7. Mipler O. Superlinear powerful transistors of the decimeter range for wired television - TIIER, 1970. vol. 58. No. 7. With. 138-147.
8. Kojlwara Y., Hlrakuwa K., Sasaki K. etc. UHF high power transistor amplifier with high-dielectric substrate. - NEC Res- & Develop. 1977. No. 45, p. 50-57.
9. Grebennikov A., Nikiforov V., Ryzhikov A. Powerful transistor amplifier modules for VHF FM and TV broadcasting.- Electrosvyaz. 1996, no. 3, p. 28-31.

Transistor

Parameter

n-p-n

Ikbo at Ukb mA/V

Iebo at Ueb mA/V

h21e units

Frp MHz

Sk pf

t to ps

Ukb max V

Uke max V

Ueb max V

Ik max A

I to imp A

Ib max A

P max W

Rt max W

2T606A

1/65

0,1/4

3,5

0,01

0,4

0,8

0,1

0,8

2,5

KT606A

1,5/65

0,3/4

0.012

0,4

0,8

0,1

0,8

2,5

KT606B

1,5/65

0,3/4

0,012

0,4

0,8

0,1

0,6

2,0

2T607A-4

n/a

n/a

0,125

n/a

n/a

0,3

1,0

KT607A-4

n/a

n/a

0,15

n/a

n/a

0.9

1.5

KT607B-4

n/a

n/a

4,5

0,15

n/a

n/a

0,8

1,5

2T610A

0,5/20

0,1/4

50-250

4,1

0,3

n/a

n/a

1,5

n/a

2T610B

0,5/20

0,1/4

20-250

4,1

0,3

n/a

n/a

1,5

n/a

KT610A

0,5/20

0,1/4

50-300

4,1

0,3

n/a

n/a

1,5

n/a

KT610B

0,5/20

0,1/4

50-300

4,1

0,3

n/a

n/a

1,5

n/a

2T633A

0,003/30

0,003/4

40-140

3,3

n/a

4,5

0,2

0,5

0,12

0,36

1,2

KT633B

0,01/30

0,01/4

20-160

3,3

n/a

4,5

0,2

0,5

0,12

0,36

1,2

2T634A

1/30

0,2/3

n/a

3,5

0,15

0,25

0,07

0,96

1.8

KT634B

2/30

0,4/3

n/a

3,5

0,15

0,25

0,07

0,96

1,8

2T637A

0,1/30

0,2/2,5

30-140

2,5

0,2

0,3

0,1

1,5

n/a

KT637A

0,1/30

0,2/2,5

30-140

2,5

0,2

0,3

0,1

1,5

n/a

KT637B

2/30

0,2/2,5

30-140

2,5

0,2

0,3

0,1

1,5

n/a

2T640A

0,5/25

0,1/3

min 15

1,3

0,6

0,06

n/a

n/a

0,6

n/a

KT640A

0,5/25

0,1/3

min 15

1,3

0,6

0,06

n/a

n/a

0,6

n/a

KT640B

0,5/25

0,1/3

min 15

1,3

0,06

n/a

n/a

0,6

n/a

KT640V

0,5/25

0,1/3

min 15

1,3

0,06

n/a

n/a

0,6

n/a

2T642A

1/20

0,1/2

n/a

1,1

n/a

0,06

n/a

n/a

0,5

n/a

KT642A

1/20

0,1/2

n/a

1,1

n/a

0,06

n/a

n/a

0,5

n/a

2T642A1

0,5/15

0,1/2

n/a

n/a

n/a

0,04

n/a

n/a

0.35

n/a

2T642B1

0,5/15

0,1/2

n/a

n/a

n/a

0,04

n/a

n/a

0,35

n/a

2T642V1

0,5/15

0,1/2

n/a

n/a

n/a

0,04

n/a

n/a

0.2s

n/a

2T642G1

0,5/15

0,1/2

n/a

n/a

n/a

0,04

n/a

n/a

0,23

n/a

2T643A-2

0,02/25

0,01/3

50-150

1,8

n/a

0,12

0,12

n/a

3,15

n/a

2T643B-2

0,02/25

0,01/3

50-150

1,8

n/a

0,12

0,12

n/a

0,15

n/a

2T647A-2

0,05/18

0,2/2

n/a

1,5

n/a

n/a

0,09

n/a

n/a

5,56

0,8

KT647A-2

0,05/18

0,2/2

n/a

1.5

n/a

n/a

0,09

n/a

n/a

0,56

0,8

2T648A-2

1/18

0.2/2

n/a

1,5

n/a

n/a

0,06

n/a

n/a

0,4

0,6

KT648A-2

1/18

0,2/2

n/a

1,5

n/a

n/a

0,06

n/a

n/a

0,4

0,6

2T657A-2

1/12

0,1/2

60-200

n/a

n/a

0,06

n/a

n/a

0,31

n/a

2T657B-2

1/12

0,1/2

60-200

n/a

n/a

0.06

n/a

n/a

0,31

n/a

2T657V-2

1/12

0,1/2

35-50

n/a

n/a

0,06

n/a

n/a

3,37

n/a

KT657A-2

1/12

0,1/2

60-200

n/a

n/a

0,06

n/a

n/a

3,37

n/a

KT657B-2

1/12

0,1/2

60-200

n/a

n/a

0,06

n/a

n/a

3,37

n/a

KT657V-2

1/12

0,1/2

35-50

n/a

n/a

0.06

n/a

n/a

3,37

n/a

KT659A

n/a

n/a

min 35

n/a

1,2

n/a

n/a

n/a

2T671A

1/15

0,4/1,5

n/a

1,5

n/a

1,5

0,15

0,15

n/a

0,9

n/a

2T682A-2

1uA/10

0,02/1

40-70

n/a

n/a

0,05

n/a

n/a

0,33

n/a

2T682B-2

1uA/10

0,02/1

80-100

n/a

n/a

0,05

n/a

n/a

0,33

n/a

KT682A-2

1uA/10

0,02/1

40-50

n/a

n/a

0,05

n/a

n/a

0,33

n/a

The following designations for the electrical parameters of transistors are accepted in the table:

Ikbo- collector reverse current (collector-base), in the numerator, at a voltage between the collector and the base, in the denominator.
Iebo- emitter reverse current (emitter-base), in the numerator, at a voltage between the emitter and base, in the denominator.
h21e- static current transfer coefficient (gain).
Fgr- the upper limiting frequency of the transistor transfer coefficient.
Sk- capacitance of the collector junction, t to - time constant of the feedback circuit (no more).
Ukb max- the maximum allowable voltage between the collector and the base.
Uke max- maximum allowable voltage between collector and emitter
Ueb max- the maximum allowable voltage between the emitter and the base.
Ik max- maximum collector current.
Ik imp.- maximum pulsed collector current.
Ib max- maximum base current.
Рmax- maximum power without heat sink.
Rt max- maximum power with heat sink.

Powerful low-voltage microwave transistors for mobile communications

The magazine "Radio" constantly informs its readers about new developments of the Voronezh Research Institute of Electronic Technology in the field of creating high-power microwave transistors for various applications. In this article, we introduce specialists and radio amateurs to the latest developments in the group of microwave transistors KT8197, KT9189, KT9192, 2T9188A, KT9109A, KT9193 for mobile communications with an output power of 0.5 to 20 W in the MV and UHF bands. The tightening of requirements for the functional and operational parameters of modern communication equipment imposes, accordingly, higher requirements for the energy parameters of high-power microwave transistors, their reliability, and also for the design of devices.

First of all, it must be borne in mind that portable and portable radio stations are powered directly from primary sources. For this purpose, chemical current sources are used (small batteries of cells or batteries) with a voltage, as a rule, from 5 to 15 V. The reduced supply voltage imposes restrictions on the power and amplifying properties of the generator transistor. At the same time, high-power low-voltage microwave transistors should have high energy parameters (such as the power gain KP and the efficiency of the collector circuit ηK) in the entire operating frequency range.

Taking into account the fact that the output power of the generator transistor is proportional to the square of the fundamental harmonic voltage on the collector, the effect of reducing the level of its output power with a decrease in the supply collector voltage can be constructively compensated by a corresponding increase in the amplitude of the useful signal current. Therefore, when designing low-voltage transistors in combination with solving a complex of design and technological problems, issues related simultaneously to the problem of reducing the saturation voltage of the collector-emitter and increasing the critical current density of the collector should be optimally solved.

The operation of low-voltage transistors in a mode with higher current densities compared to conventional generator transistors (designed for use at Upit = 28 V and higher) exacerbates the problem of ensuring long-term reliability due to the need to suppress a more intense manifestation of degradation mechanisms in current-carrying elements and contact metallization layers transistor structure. For this purpose, a highly reliable multilayer gold-based metallization system is used in the developed microwave low-voltage transistors.

The transistors discussed in this article are designed for their primary use in class C power amplifiers when switched on in a common emitter circuit. At the same time, their operation in the mode of classes A, B, and AB under a voltage different from the nominal value is permissible, provided that the operating point is within the safe operation area and measures are taken to prevent entering the autogeneration mode.

Transistors are operable even when Upit is less than the nominal value. But in this case, the values ​​of the electrical parameters may differ from the passport ones. It is allowed to operate transistors with a current load corresponding to the value of IK max, if the maximum allowable average dissipated power of the collector in continuous dynamic mode RK.av max does not exceed the limit value.

Due to the fact that the crystals of the transistor structures of the considered devices are manufactured according to the basic technology and have common structural and technological features, all transistors have the same level of breakdown voltage. In accordance with the specifications for devices, their scope is limited by the value of the maximum allowable direct voltage between the emitter and the base UEBmax< 3 В и максимально допустимого постоянного напряжения между коллектором и эмиттером UКЭ max < 36 В. При этом указанные значения пробивного напряжения справедливы для всего интервала рабочей температуры окружающей среды.

The main conceptual idea, which made it possible to take another step in the field of creating powerful low-voltage transistors in a miniature version, was the development of new original design and technological solutions when creating a series of packageless transistors KT8197, KT9189, KT9192. The essence of the idea is to create a transistor design based on a ceramic crystal holder made of beryllium oxide and tape metallized leads on a flexible carrier - a polyimide film.

A tape carrier with a special photolithographic pattern in the form of a lead frame serves as a single conductive element, on which a contact is simultaneously formed to the multi-cell transistor structure and external leads of the device. All elements of the internal tape reinforcement are sealed with a compound. The dimensions of the base of the metallized ceramic holder are 2.5x2.5 mm. The mounting surface of the crystal holder and the leads are covered with a layer of gold. The type and dimensions of the transistor are shown in fig. 1a. For comparison, we note that the smallest foreign transistors in a ceramic-metal package (for example, CASE 249-05 from Motorola) have a round ceramic base with a diameter of 7 mm.

The design of transistors of the KT8197, KT9189, KT9192 series provides for their installation on a printed circuit board using the surface mount method. In accordance with the recommendations for the use of these transistors, soldering of external leads must be carried out at a temperature of 125 ... 180 ° C for no more than 5 s.

Thanks to the realization of reserves in terms of electrical and thermal parameters, it was possible to significantly expand the area of ​​consumer functions of unpackaged microwave transistors. In particular, for transistors of the KT8197 series with a nominal voltage value Upit = 7.5 V and the series KT9189, KT9192 (12.5 V), the boundary of the safe operation area in dynamic mode is extended to Upit max = 15 V. An increase in the supply voltage relative to the nominal value allows raise the output power level of the portable transmitter and increase the radio range accordingly. Transistors are able to operate without reducing the dissipated power in a continuous dynamic mode over the entire operating temperature range.

In general, when developing these transistors, in a fundamental way, the issues of not only miniaturization, but also cost reduction were resolved. As a result, transistors turned out to be about five times cheaper than similar foreign transistors in a ceramic-metal package. The developed miniature microwave transistors can find the widest application both in traditional use in the form of discrete components and as part of hybrid microcircuit RF power amplifiers. It is obvious that their use is most effective in wearable portable radio stations.

The output stages of mobile transmitters are usually powered directly from the car battery. Transistors for the output stages are designed for a rated supply voltage Upit=12.5 V. The parametric series of transistors for each communication range are built taking into account the provision of the allowed maximum output power level for portable transmitters Pout=20 W. The development of high-power low-voltage microwave transistors (with Pout > 10 W) is associated with more complex design problems. Additionally, there are problems of dynamic power addition and heat removal from large crystals of microwave structures.

The topology of a crystal of power transistors has a highly developed emitter structure, characterized by a low impedance. To provide the required frequency band, simplify matching and increase the power gain, an LC circuit for internal matching at the input is built into the transistors. Structurally, the LC circuit is made in the form of a microassembly based on an MIS capacitor and a system of wire leads that act as inductive elements.

In the development of the power range of previously developed transistors of the 2T9175 series for use in the VHF band, transistors 2T9188A (Pout = 10 W) and KT9190A (20 W) were created. For the UHF range, transistors KT9193A (Pout \u003d 10 W) and KT9193B (20 W) were developed. The transistors are made in a standard KT-83 package (see Fig. 1b).

The use of this ceramic-metal package at one time made it possible to create highly reliable dual-purpose transistors for electronic equipment with increased requirements for external factors and with the ability to operate in harsh climatic conditions. In order to ensure guaranteed reliability at a case temperature of +60°C in relation to transistors with an output power Pout = 10 W, and with Pout = 20 W - from +40 to +125°C, the maximum allowable average power dissipation in continuous dynamic mode must be linear reduce in accordance with the formula РК.ср max=(200-Тkorp)/RT.p-to (where Тkorp - case temperature, °С; RT.p-to - thermal resistance of transition-case junction, °С/W).

At present, a federal radio communication network is being created in Russia according to the NMT-450i standard (at a frequency of 450 MHz). The developed series of devices KT9189, 2T9175, 2T9188A, KT9190A can almost completely cover the need in the considered sector of the market for equipment based on the domestic transistor element base.

In addition, since 1995, Russia has been deploying a federal network of a cellular system for mobile subscriber communication within the GSM standard (900 MHz) and a cellular system for regional communications according to the American AMPS standard (800 MHz). To create these cellular radio communication systems in UHF, small-sized transistors of the KT9192 series with an output power of 0.5 and 2 W, as well as the KT9193 series with an output power of 10 and 20 W, can be used.

The solution to the problem of miniaturization of equipment and, accordingly, its element base affected not only wearable portable radio transmitters. In a number of cases, for portable radio communication equipment, as well as for special-purpose equipment, there is a need to reduce the weight and dimensions of high-power microwave low-voltage transistors.

For these purposes, a modified flangeless housing design based on KT-83 (Fig. 1, c) was developed, in which transistors 2T9175A-4-2T9175V-4, 2T9188A-4, KT9190A-4, KT9193A-4, KT9193B-4 are produced. Their electrical characteristics are similar to the corresponding transistors in the standard design. These transistors are mounted by low-temperature soldering of the crystal holder directly to the heat sink. The body temperature during the soldering process should not exceed +150°C, and the total heating and soldering time should not exceed 2 minutes.

The main technical characteristics of the considered transistors are presented in Table. 1. The efficiency of the collector circuit of all transistors is 55%. The values ​​of the maximum allowable DC collector current correspond to the entire operating temperature range.

Table 1

Transistor	Operating frequency range, MHz	Output power, W	Power gain, times	Supply voltage, V	The maximum allowable average rass. power in cond. dynamic mode, W	Maximum allowable DC collector current, A	Maximum permissible values ​​of ambient temperature, °С	Maximum allowable case temperature, °С	Maximum allowable junction temperature, °C	Thermal resistance transition - case, °С/W	Collector capacitance, pF	Limiting gain frequency, MHz
KT8197A-2	30...175	0,5	15	7,5	2	0,5	-45...+85	-	160	-	5	400
KT8197B-2		2	10		5	1					15
KT8197V-2		5	8		8	1,6					25
KT9189A-2	200...470	0,5	12	12,5	2	0,5	-45...+85	-	160	-	4,5	1000
KT9189B-2		2	10		5	1					13
KT9189V-2		5	6		8	1,6					20	900
KT9192A-2	800...900	0,5	6	12,5	2	0,5	-45...+85	-	160	-	4,5	1200
KT9192B-2		2	5		5	1,6					13
2T9175A; 2T9175A-4	140...512	0,5	10	7,5	3,75	0,5	-60	125	200	12	10	900
2T9175B; 2T9175B-4		2	6		7,5	1				6	16
2T9175V; 2T9175V-4		5	4		15	2				3	30	780
2T9188A; 2T9188A-4	200...470	10	5	12,5	35	5	-60	125	200	4	50	700
KT9190A; KT9190A-4	200...470	20	-	12,5	40	8	-60	125	200	3	65	720
KT9193A; KT9193A-4	800...900	10	4	12,5	23	4	-60	125	200	5	35	1000
KT9193B; KT9193B-4		20	-		40	8				3	60

On fig. 2,a shows the complete circuit of transistors 2T9188A, KT9190A, and in fig. 2,b - transistors of the KT8197, KT9189, KT9192, 2T9175 series (l is the distance from the soldering boundary to the adhesive seam of the sealing cover or the sealing coating of the crystal holder. This distance is regulated in the recommendations for the use of microwave transistors in specifications for them and must be taken into account when calculating reactive elements transistors). The parameters of the reactive elements shown in the diagrams are summarized in Table. 2. These parameters are necessary for calculating the matching circuits of the amplifying path of the devices being developed.

The development of a new transistor element base opens up a broad prospect for both the creation of modern professional commercial and amateur radio communication equipment, and the improvement of the already developed one in order to improve its electrical parameters, reduce weight, dimensions and cost.

table 2

Parameters of the reactive elements of the transistor	Transistor
	2T9175A; 2T9175A-4	2T9175B; 2T9175B-4	2T9175V; 2T9175V-4	2T9188A; 2T9188A-4	KT9190A; KT9190A-4	KT9193A; KT9193A-4	KT9193B; KT9193B-4	KT8197A-2; KT9189A-2; KT9192A-2	KT8197B-2; KT9189B-2; KT9192B-2	KT8197V-2; KT9189V-2
L B1 , nH	3	2,3	1,8	0,66	0,73	1	0,84	0,19	0,1	0,2
L B2 , nH	-	-	-	0,17	0,38	0,58	0,37	-	-	-
L E1 , nH	0,5	0,35	0,28	0,16	0,15	0,26	0,19	0,22	0,12	0,12
L E2 , nH	-	-	-	0,2	0,22	0,31	0,26	-	-	-
L K1 , nH	1,25	1,1	1	0,61	0,57	0,71	0,61	0,59	0,59	0,59
С1, pF	-	-	-	370	600	75	150	-	-	-

Literature

1. Assessors V., Kozhevnikov V., Kosoy A. Scientific search for Russian engineers. The development trend of high-power microwave transistors. - Radio, 1994, No. 6, p. 2, 3.
2. Assessors V., Kozhevnikov V., Kosoy A. New microwave transistors. - Radio, 1996, No. 5, p. 57, 58.
3. Asessorov V., Asessorov A., Kozhevnikov V., Matveev S. Linear microwave transistors for power amplifiers. - Radio, 1998, No. 3, p. 49-51.
4. Angle-modulated radio stations in the land mobile service. GOST 12252-86 (ST SEV 4280-83).

Read and write useful

Microwave transistors are used in many areas of human activity: television and radio broadcast transmitters, repeaters, civil and military radars, base stations of a cellular communication system, avionics, etc.

In recent years, there has been a noticeable trend in the transition from bipolar technology for the production of microwave transistors to VDMOS (Vertical Diffusion Metal Oxide Semiconductors) and LDMOS (Laterally Diffused Metal Oxide Semiconductors) technologies. The most advanced LDMOS technology has the best features such as linearity, gain, thermal performance, mismatch tolerance, high efficiency, power dissipation margin, reliability. Philips transistors have exceptional lot-to-batch repeatability, and Philips is proud of that. When replacing failed transistors, you do not have to worry about the process of setting up the equipment again, since all the parameters of the transistors are absolutely identical. None of the Philips competitors can boast of this.

All new Philips developments are based on the new modern LDMOS technology.

Transistors for cellular base stations

In addition to transistors packaged in cases, Philips produces integrated modules.

Table 4. Main integrated modules

Type	Pout, W	Technology	Frequency	Application area
BGY916	19	BIPOLAR	900 MHz	GSM
BGY916/5	19	BIPOLAR	900 MHz	GSM
BGY925	23	BIPOLAR	900 MHz	GSM
BGY925/5	23	BIPOLAR	900 MHz	GSM
BGY2016	19	BIPOLAR	1800-2000 MHz	GSM
BGF802-20	4	LDMOS	900-900 MHz	CDMA
BGF 844	20	LDMOS	800-900 MHz	GSM/EDGE (USA)
BGF944	20	LDMOS	900-1000 MHz	GSM/EDGE (EUROPE)
BGF1801-10	10	LDMOS	1800-1900 MHz	GSM/EDGE (EUROPE)
BGF1901-10	10	LDMOS	1900-2000 MHz	GSM/EDGE (USA)

Distinctive features of integrated modules:

• LDMOS technology (soldering directly to the heatsink, linearity, higher gain), o lower distortion,
• less heating of the semiconductor due to the use of a copper flange, o integrated temperature offset compensation,
• 50 ohm inputs/outputs,
• linear amplification,
• support for many standards (EDGE, CDMA).

BGF0810-90

• output power: 40W,
• gain: 16 dB,
• Efficiency: 37%,

BLF1820-90

• output power: 40W,
• gain: 12 dB,
• Efficiency: 32%,
• Adjacent Channel Power Attenuation ACPR: -60dB,
• EVM error vector amplitude: 2%.

Transistors for broadcast stations

For the past 25 years, Philips has maintained its leadership in this field. Using the latest advances in LDMOS technology (BLF1xx, BLF2xx, BLF3xx, BLF4xx, BLF5xx, series) allows you to constantly strengthen your position in the market. An example is the huge success of the BLF861 transistor for TV transmitters. Unlike competitive transistors, the BLF861 has proven itself to be a highly reliable and highly stable element, protected from failure when the antenna is disconnected. None of the competitors could come close to the characteristics of the BLF861 in terms of stability. We can name the main areas of application for such transistors: transmitters for frequencies from HF to 800 MHz, private radio stations PMR (TETRA), VHF transmitters for civil and military purposes.

Table 5. L- and S-band radar transistors

	Type	F, GHz	Vcc,B	Tp, ms	Coeff. filling, %	Power, W	Efficiency,%	Gain, dB
L-band	RZ1214B35Y	1,2-1,4	50	150	5	>35	>30	>7
	RZ1214B65Y	1,2-1,4	50	150	5	>70	>35	>7
	RX1214B130Y	1,2-1,4	50	150	5	>130	>35	>7
	RX1214B170W	1,2-1,4	42	500	10	>170	>40	>6
	RX1214B300Y	1,2-1,4	50	150	5	>250	>35	>7
	RX1214B350Y	1,2-1,4	50	130	6	>280	>40	>7
	Bill 21435	1,2-1,4	36	100	10	>35	45	>13
	BLL1214-250	1,2-1,4	36	100	10	>250	45	>13
S-band	BLS2731-10	2,7-3,1	40	100	10	>10	45	9
	BLS2731-20	2,7-3,1	40	100	10	>20	40	8
	BLS2731-50	2,7-3,1	40	100	10	>50	40	9
	BLS2731-110	2,7-3,1	40	100	10	>110	40	7,5
Upper S-band	BLS3135-10	3,1-3,5	40	100	10	>10	40	9
	BLS3135-20	3,1-3,5	40	100	10	>20	40	8
	BLS3135-50	3,1-3,5	40	100	10	>50	40	8
	BLS3135-65	3,1-3,5	40	100	10	>65	40	>7

Table 6. Avionics transistors

	Type	F,GHz	Vcc,B	Tp, ms	Coeff. filling, %	Power, W	Efficiency,%	Gain, dB
BIPOLAR	MZ0912B50Y	0,96-1,215	50	10	10	>50	>42	>7
	MX0912B100Y	0,96-1,215	50	10	10	>100	>42	>7
	MX0912B251Y	0,96-1,215	50	10	10	>235	>42	>7
	MX0912B351Y	0,96-1,215	42	10	10	>325	>40	>7
LDMOS			Vds
	BLA1011-200	1,03-1,09	36	50	1	>200	50	15
	BLA1011-10	1,03-1,09	36	50	1	>10	40	16
	BLA1011-2	1,03-1,09	36	50	1	>2	-	18

The main characteristics of the transistor BLF861A

• Push-pull transistor (push-pull amplifier),
• output power over 150W,
• gain over 13 dB,
• Efficiency over 50%,
• covers the band from 470 to 860 MHz (bands IV and V),
• is the industry standard in TV transmitters today.

New transistor model BLF647

• designed based on BLF861A,
• large gain of 16 dB at 600 MHz,
• output power up to 150 W,
• covers the band from 1.5 to 800 MHz,
• reliable, resistant to mismatch,
• resistant to antenna disconnection,
• has a built-in resistor that allows you to work at frequencies HF and VHF,
• Push-pull transistor (push-pull amplifier).

Transistor BLF872

• is being developed as a more powerful replacement for the BLF861A,
• start of production 1st quarter 2004,
• output power up to 250 W,
• the most reliable transistor in terms of resistance to mismatch,
• maintains linearity,
• maintains reliability,
• current displacement Idq less than 10% for 20 years,
• gain more than 14 dB,
• covers the band from 470 to 860 MHz.

Transistors for radar and avionics

The new Philips transistors for radar and avionics are also manufactured using state-of-the-art LDMOS technology. Crystals made using LDMOS technology heat up less, are more reliable, have higher amplification, and do not require an insulator between the substrate and the heatsink. Accordingly, fewer transistors are required to achieve the same performance, further improving reliability and reducing product cost.

New developments:

BLA0912-250

• band from 960 to 1250 MHz (all major avionics frequencies),
• high gain up to 13 dB,
• reliability, resistance to phase mismatch 5:1,
• linearity,
• samples will be available from June 2003.

BLS2934-100

• band from 2.9 to 3.4 GHz (all major avionics frequencies),
• use of a standard non-pressurized housing,
• samples will be available by the end of 2003.

To sum it up, Philips is moving with the times and offering transistors that enable new devices with more advanced features: smaller size, higher power output, fewer piping components and lower end product cost.